Static Random Access Memory (SRAM) is a type of semiconductor memory.

The word "static" indicates that the memory retains its contents as long as power remains applied, unlike dynamic RAM (DRAM) that needs to be periodically refreshed. (Nevertheless, SRAM should not be confused with read-only memory and flash memory, since it is volatile memory and preserves data only while power is continuously applied.)

Random access means that locations in the memory can be written to or read from in any order, regardless of the memory location that was last accessed.

Each bit in an SRAM is stored on four transistors that form two cross-coupled inverters. This storage cell has two stable states which are used to denote 0 and 1. Two additional access transistors serve to control the access to a storage cell during read and write operations. It thus typically takes six MOSFETs to store one memory bit.

The symmetric circuit structure allows the value of a memory location to be read much faster than in a DRAM. Another difference with DRAM that contributes to making SRAM faster is that commercial chips accept all address bits at a time. As opposed to this, commodity DRAMs have the address multiplexed in two halves, i.e. higher bits followed by lower bits, over the same package pins in order to keep their size and cost down.

SRAM should not be confused with SDRAM, which stands for synchronous DRAM and is entirely different from SRAM, or with pseudostatic RAM (PSRAM), which is DRAM disguised as SRAM.

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